gsib620 thru gsib680 vishay general semiconductor document number: 88648 revision: 15-dec-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 single-phase single in-line bridge rectifiers features ? ul recognition file number e54214 ? thin single in-line package ? glass passivated chip junction ? high surge current capability ? high case dielectric strength of 1500 v rms ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications general purpose use in ac-to-dc bridge full wave rectification for switch ing power supply, home appliances, office equipment, industrial automation applications. mechanical data case: gsib-5s epoxy meets ul 94 v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: as marked on body mounting torque: 10 cm-kg (8.8 inches-lbs) max. recommended torque: 5.7 cm-kg (5 inches-lbs) primary characteristics i f(av) 6.0 a v rrm 200 v to 800 v i fsm 180 a i r 10 a v f 0.95 v t j max. 150 c case style gsib-5s ~ ~ ~ ~ notes: (1) unit case mounted on aluminum plate heatsink (2) units mounted on p.c.b. with 0.5 x 0.5" ( 12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length maximum ratings (t a = 25 c unless otherwise noted) parameter symbol gsib620 gsib640 gsib660 gsib680 unit maximum repetitive peak reverse voltage v rrm 200 400 600 800 v maximum rms voltage v rms 140 280 420 560 v maximum dc blocking voltage v dc 200 400 600 800 v maximum average forward rectified output current at t c = 100 c t a = 25 c i f(av) 6.0 (1) 2.8 (2) a peak forward surge current single sine-wave superimposed on rated load (jedec method) i fsm 180 a rating for fusing (t < 8.3 ms) i 2 t 120 a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c
gsib620 thru gsib680 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88648 revision: 15-dec-08 2 notes: (1) unit case mounted on aluminum plate heatsink (2) units mounted on p.c.b. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length (3) recommended mounting position is to bol t down on heatsink with silicone thermal compound for maximum heat transfer with #6 s crew ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol gsib620 gsib640 gsib660 gsib680 unit maximum instantaneous forward voltage drop per diode 3.0 a v f 0.95 v maximum dc reverse current at rated dc blocking voltage per diode t a = 25 c t a = 125 c i r 10 250 a thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol gsib620 gsib640 gsib660 gsib680 unit typical thermal resistance r ja r jc 22 (2) 3.4 (1) c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode gsib660-e3/45 7.0 45 20 tube figure 1. derating curve output rectified current 0 50 100 150 0 2 4 6 8 10 temperat u re (c) a v erage for w ard o u tp u t c u rrent (a) heatsink mo u nting, t c p.c.b. mo u nting, t a figure 2. maximum non-repetitive peak forward surge current per diode 1 10 100 0 60 30 120 90 1 8 0 150 210 t j = t j max. single sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 1.0 cycle
gsib620 thru gsib680 vishay general semiconductor document number: 88648 revision: 15-dec-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in millimeters figure 3. typical forward characteristics per diode figure 4. typical reverse characteristics per diode 0.3 1.1 0.01 10 0.1 1 100 0.5 0.7 0.9 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 150 c t j = 125 c t j = 25 c 0.4 1.2 0.6 0. 8 1.0 1000 20 60 40 100 8 0 0.01 0.1 1 10 100 t j = 150 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent ( a) figure 5. typical juncti on capacitance per diode figure 6. typical transient thermal impedance 0.1 1 10 100 10 100 1000 1 re v erse v oltage ( v ) j u nction capaci tance (pf) 0.01 0.1 1 10 100 0.1 10 100 t - heating time (s) transient thermal impedance (c/ w ) 1 2.5 0.2 2.2 0.2 1 0.1 10 0.2 7.5 0.2 4 0.2 5 20 0.3 17 . 5 0.5 11 0.2 2.7 0.2 3.5 0.2 3.2 0.2 0.7 0.1 4.6 0.2 3.6 0.2 + 7.5 0.2 30 0.3 case style gsib-5s
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